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Article Navigation> JOURNAL OF BEIJING INSTITUTE OF TECHNOLOGY> 2020> 29(2): 184-189
Song Feng, Lixun Song, Yuan Zang, Zheyan Tu, Lianbi Li. Research of Current Mode Atomic Force Microscopy (C-AFM) for Si/SiC Heterostructures on 6H-SiC(0001)[J]. JOURNAL OF BEIJING INSTITUTE OF TECHNOLOGY, 2020, 29(2): 184-189. doi: 10.15918/j.jbit1004-0579.20009
Citation: Song Feng, Lixun Song, Yuan Zang, Zheyan Tu, Lianbi Li. Research of Current Mode Atomic Force Microscopy (C-AFM) for Si/SiC Heterostructures on 6H-SiC(0001)[J].JOURNAL OF BEIJING INSTITUTE OF TECHNOLOGY, 2020, 29(2): 184-189.doi:10.15918/j.jbit1004-0579.20009
shu

Research of Current Mode Atomic Force Microscopy (C-AFM) for Si/SiC Heterostructures on 6H-SiC(0001)

doi:10.15918/j.jbit1004-0579.20009
  • 1.

    School of Science, Xi’an Polytechnic University, Xi’an 710048, China

  • 2.

    Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China

  • Received Date:2020-01-16
    Abstract
  • Si/SiC heterostructures with different growth temperatures were prepared on 6H-SiC(0001) by LPCVD. Current mode atomic force microscopy and transmission electron microscopy were employed to investigate the electrical properties and crystalline structure of Si/SiC heterostructures. Face-centered cubic (FCC) on hexagonal close-packing (HCP) epitaxy of the Si(111)/SiC(0001) heterostructure was realized at 900℃. As the growth temperature increases to 1050℃ , the <110> preferred orientation of the Si film is observed. The Si films on 6H-SiC(0001) with different growth orientations consist of different distinctive crystalline grains: quasi-spherical grains with a general size of 20 μm, and columnar grains with a typical size of 7 μm×20 μm. The electrical properties are greatly influenced by the grain structures. The Si film with <110> orientation on SiC(0001) consists of columnar grains, which is more suitable for the fabrication of Si/SiC devices due to its low current fluctuation and relatively uniform current distribution.
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