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LIAO Bo, WANG Jing-jing, LU Shan-shan, YAN Hui, WANG Bo. Influence of the Plasma State on the Formation of Nano Crystalline SiC Films[J]. JOURNAL OF BEIJING INSTITUTE OF TECHNOLOGY, 2004, 13(2): 123-126.

Citation:

LIAO Bo, WANG Jing-jing, LU Shan-shan, YAN Hui, WANG Bo. Influence of the Plasma State on the Formation of Nano Crystalline SiC Films[J].JOURNAL OF BEIJING INSTITUTE OF TECHNOLOGY, 2004, 13(2): 123-126.

Citation:

LIAO Bo, WANG Jing-jing, LU Shan-shan, YAN Hui, WANG Bo. Influence of the Plasma State on the Formation of Nano Crystalline SiC Films[J].JOURNAL OF BEIJING INSTITUTE OF TECHNOLOGY, 2004, 13(2): 123-126.

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Influence of the Plasma State on the Formation of Nano Crystalline SiC Films

1.
School of Information Science and Technology, Beijing Institute of Technology, Beijing 100081, China
2.
Key Laboratary of Advanced Functional Materials, Beijing Polytechnic University, Beijing 100022, China

Funds:SponsoredbytheMinisterialLevelAdvancedResearchFoundation(21140119)

Received Date:2003-07-02

Abstract

Abstract

The influence of the plasma state on the microstructure transformation from amorphous to nano-(crystalline) state is emphasized during the formation of the silicon carbide (SiC) films deposited by the plasma enhanced chemical vapor technique. The effect of two key parameters, the working pressure and hydrogen concentration in the gas flow, that perform the dependence by modulating the two essential factors of the plasma state-ions energy and gas composition, is in-depth investigated. The experimental results showed that nanocrystalline SiC films fit for field emitters could be achieved under an appropriate ion energy flow density and gas components in the (plasma).
- nanocrystalline,
- β-SiC,
- plasma enhanced chemical vapour deposition (PECVD),
- plasma state

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References (18)

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