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Article Navigation> JOURNAL OF BEIJING INSTITUTE OF TECHNOLOGY> 2005> 14(4): 373-377
SU Mei-kai, GAO Zhi-yun, LIU Bing-qi, ZUO Fang. Study on Burn-In and Screening Method for 1 310 nm InGaAsP Laser Diodes[J]. JOURNAL OF BEIJING INSTITUTE OF TECHNOLOGY, 2005, 14(4): 373-377.
Citation: SU Mei-kai, GAO Zhi-yun, LIU Bing-qi, ZUO Fang. Study on Burn-In and Screening Method for 1 310 nm InGaAsP Laser Diodes[J].JOURNAL OF BEIJING INSTITUTE OF TECHNOLOGY, 2005, 14(4): 373-377.
shu

Study on Burn-In and Screening Method for 1 310 nm InGaAsP Laser Diodes

  • 1.

    School of Information Science and Technology, Beijing Institute of Technology, Beijing 100081, China; Jinan Ordnance and Radar Institute, Jinan 250022, China

  • 2.

    School of Information Science and Technology, Beijing Institute of Technology, Beijing 100081, China

  • Received Date:2004-04-24
    Abstract
  • The accelerating burn-in and screening method of processing 1 310 nm InGaAsP of laser diodes (LDs) is introduced. It is confirmed that the theory of burn-in and screening is based on the second derivative minimum of burn-in curve, and the new testing method has been given, that is automatic current control (ACC) burn-in and automatic power control (APC) testing. This avoidably bring the errors of testing in only ACC or APC method, which need to monitor and control or test LDs power change by photo-detector (PD) at high temperature, and LDs or PDs must be into the same environment (PD will be burn-in at the same time). Through the experiment, the accelerating burn-in and screening condition of the devices has been confirmed: ACC, 200 mA,100 ℃, 8 h. This raise work efficiency 12 times than Bellcore standard and save testing fee.
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    • References (12)
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