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Article Navigation> JOURNAL OF BEIJING INSTITUTE OF TECHNOLOGY> 2012> 21(4): 547-550
WANG Xin, TANG Hai-ying, LI Ye, QIN Xu-lei, DUANMU Qing-duo, YU Yang. Influence of O/Ar ratio on the properties of NiO thin film grown with the method of radio-frequency magnetron sputtering[J]. JOURNAL OF BEIJING INSTITUTE OF TECHNOLOGY, 2012, 21(4): 547-550.
Citation: WANG Xin, TANG Hai-ying, LI Ye, QIN Xu-lei, DUANMU Qing-duo, YU Yang. Influence of O/Ar ratio on the properties of NiO thin film grown with the method of radio-frequency magnetron sputtering[J].JOURNAL OF BEIJING INSTITUTE OF TECHNOLOGY, 2012, 21(4): 547-550.
shu

Influence of O/Ar ratio on the properties of NiO thin film grown with the method of radio-frequency magnetron sputtering

  • 1.

    School of Science, Changchun University of Science and Technology, Changchun 130022, China

  • 2.

    International Business College, College of Humanities and Sciences of Normal University, Changchun 130017, China

  • Received Date:2011-07-21
    Abstract
  • In order to obtain high quality NiO thin film grown with the radio-frequency magnetron sputtering method, the influence of O/Ar ratio on the structure, band-gap, resistivity and optical transmittance of NiO thin films were studied. It was found that the obtained NiO thin film showed (111) preferred orientation and higher transparency in the visible region. With the increasing of O/Ar ratio from 1∶7 to 8∶2, the optical transmittance of NiO thin films decreased and the optical band-gap was between 3.4.eV and 3.7.eV, and the sheet resistivity decreased from 5.4×10 7. Ω /□ to 1.0 ×10 5. Ω /□. Our study shows that the properties of NiO thin films can be adjusted in a wide range by adjusting the O/Ar ratio in the sputtering process.
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    • References (13)
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